The Defense Advanced Research Project Agency (DARPA) has selected the Texas Institute for Electronics (TIE) at The University of Texas at Austin to develop the next generation of high-performing semiconductor microsystems for the Department of Defense. Under this agreement, TIE will establish a national open access R&D and prototyping fabrication facility aimed at creating higher performance, lower power, lightweight, and compact defense systems applicable to radar, satellite imaging, unmanned aerial vehicles, and other systems.
TIE is a UT Austin-supported semiconductor consortium. The new microsystem designs will be enabled by 3D Heterogeneous Integration (3DHI), a semiconductor fabrication technology that integrates diverse materials and components into microsystems using precision assembly technologies.
“By investing in leading-edge microelectronics manufacturing, we are helping secure this vulnerable supply chain, boosting our national security and global competitiveness, and driving innovation in critical technologies,” said U.S. Sen. John Cornyn. “The next generation of high-performing semiconductors these resources will enable through DARPA’s partnership with UT TIE will help not only bolster our defense but also pave the way for the U.S. to reclaim its leadership role in this critical industry.”
The project represents a total investment of $1.4 billion. The $840 million award from DARPA is a substantial return on the Texas Legislature’s $552 million investment in TIE, which has funded modernization of two UT fabrication facilities to strengthen long-term U.S. technology leadership. These facilities will be open to industry, academia, and government entities.
“The University of Texas is honored to use our vast talent and expertise in service to our country,” said Kevin Eltife, chairman of the UT System Board of Regents. “This partnership will allow UT Austin faculty, staff and students to bolster our national defense and further demonstrate the University’s global leadership in technology-related teaching and research.”
DARPA’s Next Generation Microelectronics Manufacturing (NGMM) Program is among the largest federal awards ever received by any UT System institution. It aligns with UT President Jay Hartzell’s 10-year strategic plan for UT to become the world’s highest-impact public research university.
“The old Wayne Gretzky quote is ‘Skate to where the puck is going,’ and we worked with the state of Texas to do just that,” Hartzell said. “We have an opportunity not only to give our military a competitive edge but also create jobs, attract businesses, grow Austin’s innovation ecosystem and cement Texas as a leader in microsystems innovation.”
“TIE is tapping into the semiconductor talent available in the Cockrell School of Engineering, in Texas and nationally,” said S.V. Sreenivasan, TIE founder and chief technology officer as well as UT professor of mechanical engineering.
The program consists of two phases — each 2.5 years long. In Phase 1, TIE will establish infrastructure capabilities; Phase 2 involves engineering 3DHI hardware prototypes important to DOD needs while automating processes.
“DARPA’s vision for NGMM includes developing an infrastructure enabling users to efficiently develop advanced microsystems meeting stringent quality standards,” said John Schreck, CEO of TIE.
TIE established its strategic vision over three years with key partners across the semiconductor ecosystem including 32 defense electronics companies and 18 academic institutions.
Founded in 2021 with an aim towards excellence in 3DHI technology development and workforce creation within semiconductors sector,TIE boasts an extensive network comprising state/local governments,national labs,and recognized academic bodies.